Samsung 30nm 64GB NAND Flash revealed

Oct 23 2007, 11:00am CDT | by Luigi Lugmayr

Samsung announced another milestone in flash memory technology. The company announced today that it has developed the world‘s first 64 Gigabit (Gb) multi level cell (MLC) NAND flash memory chip - using 30nm-class process technology.

A maximum of sixteen 64Gb flash devices can be combined to make a 128 Gigabyte (GB) memory card that can store 80 DVD resolution movies or 32,000 MP3 music files.
The 30nm-class 64Gb NAND flash marks the eighth consecutive year that the density of memory has doubled and the seventh straight year that the nanometer scale has improved for NAND flash since the 100nm 1Gb NAND was developed in 2001.

The new flash device was successfully developed through the use of a new manufacturing process called self-aligned double patterning technology (SaDPT). In SaDPT, the 1st pattern transfer is a wider-spaced circuit design of the target process technology, while the 2nd pattern transfer fills in the spaced area with a more closely designed pattern.
Samsung expects to begin production of 30nm-class 64Gb flash devices in 2009.

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Luigi Lugmayr
Luigi is the founding chief Editor of I4U News and brings over 15 years experience in the technology field to the ever evolving and exciting world of gadgets. He started I4U News back in 2000 and evolved it into vibrant technology magazine.
Luigi can be contacted directly at ml@i4u.com. Luigi posts regularly on LuigiMe.com about his experience running I4U.