Samsung Readies ‘SSD For Everyone’ Based On TLC 3D V-NAND Memory

Posted: Oct 9 2014, 11:35am CDT | by , in News | Technology News


Samsung readies ‘SSD for everyone’ based on TLC 3D V-NAND memory
/* Story Top Left 2010 300x250, created 7/15/10 */ google_ad_slot = "8340327155";

Samsung is already demonstrating its 850 Evo SSDs at a trade-show, it is highly likely that they will reach the market in the foreseeable future

It wasn’t quite happening under the veil that Samsung was planning to manufacture triple-level-cell (TLC) 3D V-NAND flash memory and even build solid-state drives on its base. This was no secret however we are certainly surprised at the fact that this memory platform is already in the production stage and Samsung is already preparing an SSD family based on three-bit 3D V-NAND.

At the IFA 2014 in Berlin, Samsung showed a model of a robust state drive focused around the NAND streak memory that consolidates generally low assembling expense with elite and high persistence, as per Les Numeriques. No accurate insights about the approaching Samsung 850 Evo SSDs are known, however it is clear that they will be accessible in 2.5" structure variable and with Serial ATA-6gb/s interface.

When it comes to the NAND flash, the manufacturers are always trying to look for newer ways to increase bit density of their memory, keeping in mind the growing demand for solid-state storage and necessity to lower price of NAND flash. One way in which the bit density can be boosted is that the amount of bits stored by every NAND flash cell can be increased to three bits (this is two bits in the case of MLC). This however greatly decreases the write endurance of memory. There is also another way in which the NAND flash is made using thinner manufacturing technology which also lowers the write endurance. With the combination of these two methods, the write endurance of memory gets dramatically low.

There are other ways too in which the bit density can be boosted and one of them is to stack the numerous layers of NAND flash vertically. The result of this technique will be called 3D V-NAND. Samsung makes use of the 42nm process technology to make 3D V-NAND which helps in increasing its endurance compared to planar NAND flash made using 10nm- or 20nm-class process technologies. Also the stacked NAND gives higher performance than all others.

source: kitguru

You May Like


The Author

<a href="/latest_stories/all/all/32" rel="author">Ahmed Humayun</a>
Ahmed Humayun is a technology journalist bringing you the hottest tech stories of the day.




Leave a Comment

Share this Story

Follow Us
Follow I4U News on Twitter
Follow I4U News on Facebook

You Also Like


Read the Latest from I4U News