The Intel Company might have delayed its 10 nanometer DRAM but Samsung is all set to go ahead with its plans of the same DRAM chips.
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The chips shall be mass producing the new DDR4 chips through 8 GB sizes even before Micron and SK Hynix.
As a result of this technology, 128 GB SIMM modules for enterprise servers as well as 4GB SIMM modules for laptops shall be produced.
Samsung has also given the news to introduce the 10 nanometer mobile DRAM in the future too. Samsung has already introduced 10 nanometer NAND flash for SSD’s and other such related devices the previous year.
However bringing the DRAMs to a smaller size might be quite tough since this kind of volatility requires a capacitor with the transistor to have all other elements as smaller sizes.
Now adjusting such narrow capacitors on the top of transistors that are only nanometer wide is ten times tougher than usual.
For this reason, the quadruple patterning technology was used. This technology was first used for the NAND flash where many lithographic exposures were used to increase the resolution of the chip and it features.
This in turn results in a 30 percent faster and a 20 percent powerful chip than the last 20 nanometer RAM.
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This Ram shall be first seen in laptops whereas PCs shall be able to upgrade to this technology by the end of the year.