Toshiba Readies 43nm SLC NAND Flash

Toshiba has announced that it is preparing to launch 43nm SLC NAND flash memory. The new NAND ranges in density from 512Mbits to 16Gb making this the highest density NAND chips available. Products using the new NAND will come to market in Q1 2009.

Toshiba says that SLC chips offer fast read and write times and support large numbers of write and erase cycles. Toshiba's roadmap lists the 64Gb, 32Gb, and 16Gb modules coming in Q1 2009 with other capacities, package types, and page sizes coming later in 2009.

Toshiba says that the wire speed of the new NAND chips is 2.5 times faster than comparable Toshiba MLC NAND flash memory. The 43nm process Toshiba is using enables the NAND to double in density and will allow them to be used in products requiring higher performance and reliability.

Via Toshiba

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