Samsung has announced that it has developed and validated the first 40nm DRAM chip. The chip is a 1Gb DDR2 component and a 1GB 800Mbps DDR2 SODIMM module. Both of the products have been certified by the Intel Platform Validation program for the GM45 Express mobile chipset.
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By moving from 50nm to the new 40nm technology Samsung is able to make DRAM modules that need less power, produce less heat, and perform better than older technology. Samsung says it has accelerated it migration to 40nm products and plans to bring 40nm products to mass production in a year.
The company will also be working on applying the 40nm process to a 2Gb DDR3 DRAM chip by the end of 2009. The 40nm DRAM modules represent a 60% increase in productivity compared to 50nm modules. The process is also a step in moving from DDR3 to DDR4 technology according to Samsung.
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