Intel today announced a significant breakthrough in the evolution of the transistor - it goes 3D. For the first time since the invention of silicon transistors over 50 years ago, transistors using a three-dimensional structure will be put into high-volume manufacturing. Intel will introduce a 3D transistor design called Tri-Gate, first disclosed by Intel in 2002, into high-volume manufacturing at the 22-nanometer (nm) node in an Intel chip codenamed "Ivy Bridge." A nanometer is one-billionth of a meter.
The 3D Tri-Gate transistors represent a fundamental departure from the two-dimensional planar transistor structure that has powered not only all computers, mobile phones and consumer electronics to-date, but also the electronic controls within cars, spacecraft, household appliances, medical devices and virtually thousands of other everyday devices for decades.
"Intel's scientists and engineers have once again reinvented the transistor, this time utilizing the third dimension," said Intel President and CEO Paul Otellini. "Amazing, world-shaping devices will be created from this capability as we advance Moore's Law into new realms."
The 22nm 3-D Tri-Gate transistors provide up to 37 percent performance increase at low voltage versus Intel's 32nm planar transistors. This incredible gain means that they are ideal for use in small handheld devices, which operate using less energy to "switch" back and forth.
Today, Intel demonstrated the world's first 22nm microprocessor, codenamed "Ivy Bridge," working in a laptop, server and desktop computer. Ivy Bridge-based Intel Core family processors will be the first high-volume chips to use 3D Tri-Gate transistors. Ivy Bridge is slated for high-volume production readiness by the end of this year.
It is good to know that we do not hit a wall with chip performance. The race for more performance in ever smaller devices can continue at blazing speeds.