Graphene is touted the "Miracle Material."
Samsung has invented a new transistor structure using graphene, that is aimed to overcome the limits of conventional silicon. Currently, semiconductor devices consist of billions of silicon transistors. To increase the performance of transistors, the options have to been to either reduce the size of individual transistors to shorten the traveling distance of electrons, or to use a material with higher electron mobility which allows for faster electron velocity. For the past 40 years, the industry has been increasing performance by reducing size. However, experts believe we are now nearing the potential limits of scaling down.
Since graphene possesses electron mobility about 200 times greater than that of silicon, it has been considered a potential substitute. Although one issue with graphene is that, unlike conventional semiconducting materials, current cannot be switched off because it is semi-metallic. This has become the key issue in realizing graphene transistors. Both on and off flow of current is required in a transistor to represent “1” and “0” of digital signals. Previous solutions and research have tried to convert graphene into a semi-conductor. However, this radically decreased the mobility of graphene, leading to skepticism over the feasibility of graphene transistors.
Samsung Advanced Institute of Technology has developed a device that can switch off the current in graphene without degrading its mobility. The demonstrated graphene-silicon Schottky barrier can switch current on or off by controlling the height of the barrier. The new device was named Barristor, after its barrier-controllable feature.
More details on Samsung's blog.