Samsung Electronics announced today that its 50 nanometer (nm) DDR2 (double data rate) DRAM - the industry’s most advanced DRAM (dynamic random access memory) - has been certified by Intel Corporation to work with Intel’s existing and next-generation chipsets at speeds of 800 megabits per second (Mbps).

Processing 1Gb DDR2 DRAMs in the 50nm range doubles the productivity of a 1Gb DDR2 DRAM fabricated using 80nm process technology, while improving production efficiency by 50% over DRAM produced using the 60nm fabrication process.
Samsung’s 50nm-class DRAM processing technology, now validated by Intel, will be used in mass producing DDR2 beginning the first half of next year, as well as other next-generation DRAM memory, including DDR3, GDDR4 and GDDR5, plus the latest mobile DRAM.