Micron announced today that it was sampling the industries first 8 GB single level cell high speed NAND product. The SLC high speed NAND is reported to reach read speeds of up to 200 MB/s.

"As more and more of today's popular consumer electronic and computing devices continue to move to silicon for storage, it is essential that we improve how data is accessed and transferred in NAND," said Bill Lauer, senior director of marketing for Micron's memory group. "With the new capabilities designed into high speed NAND, the performance benefits will be visible to the consumer, allowing them to experience a faster way of transferring digital content between devices such as computers, digital cameras, MP3 players and cell phones."

Micron says the high speed NAND is designed on a 50nm process and is sampling now to major OEMs and controller makers with mass production expected to begin in the second half of 2008. Write speeds for the new NAND is a claimed 100 MB/s.

Via Micron