Samsung announced another milestone in flash memory technology. The company announced today that it has developed the world‘s first 64 Gigabit (Gb) multi level cell (MLC) NAND flash memory chip - using 30nm-class process technology.
A maximum of sixteen 64Gb flash devices can be combined to make a 128 Gigabyte (GB) memory card that can store 80 DVD resolution movies or 32,000 MP3 music files.
The 30nm-class 64Gb NAND flash marks the eighth consecutive year that the density of memory has doubled and the seventh straight year that the nanometer scale has improved for NAND flash since the 100nm 1Gb NAND was developed in 2001.
The new flash device was successfully developed through the use of a new manufacturing process called self-aligned double patterning technology (SaDPT). In SaDPT, the 1st pattern transfer is a wider-spaced circuit design of the target process technology, while the 2nd pattern transfer fills in the spaced area with a more closely designed pattern.
Samsung expects to begin production of 30nm-class 64Gb flash devices in 2009.
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