Samsung has announced today to start the mass production of faster and highly reliable world's first three-dimensional Vertical NAND flash memory. Density of this new 3D V-NAND is 16GB per chip that breaks the current scaling limits.
Samsung has announced today to start the volume production of the industry's first three-dimensional Vertical NAND flash memory of density 128 gigabit (16GB) per chip. What actually Taiwanese tech giant changes in this new V-NAND flash is to shift the memory cells of conventional flash from usual 2D to a 3D plane. Samsung actually uses its own 3D vertical cell structure linked by long lasting Charge Trap Flash (CTF) technology and vertical interconnect process technology. This actually improves the scaling limits and overcomes the breakdown and interference issues that usually occur in high density flash storage.
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This all new Samsung's 3D V-NAND flash is 2-10X more reliable and can scale double than 20nm-class planar NAND flash. And it can also doubles the writing data speed than conventional 10nm-class floating gate NAND flash memory. This high performing 3D V-NAND can be used in a wide variety of apps and electronics including SSDs and embedded NAND storage. IHS
Samsung Electronics Co. SVP of flash product & technology, Jeong-Hyuk Choi, said, "The new 3D V-NAND flash technology is the result of our employees' years of efforts to push beyond conventional ways of thinking and pursue much more innovative approaches in overcoming limitations in the design of memory semiconductor technology. Following the world's first mass production of 3D Vertical NAND, we will continue to introduce 3D V-NAND products with improved performance and higher density, which will contribute to further growth of the global memory industry."
Worldwide NAND flash memory market revenues are approximately US $23.6 billion in 2013 with a CAGR of 11 percent. iSuppli expected revenues of US $30.8 billion for global NAND flash memory market by the end of 2016.