Intel and Micron unleash new memory technology marking the first new memory technology in 25 years.
Intel and Micron Technology unveiled 3D XPoint technology. This new non-volatile memory is a major breakthrough in memory process technology. 3D XPoint marks the first new memory category since the introduction of NAND flash in 1989.
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3D XPoint combines the performance, density, power, non-volatility and cost advantages of all available memory technologies on the market today states the announcement.
3D XPoint is up to 1,000 times faster than NAND, and is 10 times denser than conventional memory. The new memory technology has also a 1,000 greater endurance.
“For decades, the industry has searched for ways to reduce the lag time between the processor and data to allow much faster analysis,” said Rob Crooke, senior vice president and general manager of Intel’s Non-Volatile Memory Solutions Group. “This new class of non-volatile memory achieves this goal and brings game-changing performance to memory and storage solutions.”
“One of the most significant hurdles in modern computing is the time it takes the processor to reach data on long-term storage,” said Mark Adams, president of Micron. “This new class of non-volatile memory is a revolutionary technology that allows for quick access to enormous data sets and enables entirely new applications.”
3D XPoint technology could also enhance the PC experience. Users could get faster interactive social media and collaboration as well as more immersive gaming experiences.
The transistor-less cross point architecture creates a three-dimensional checkerboard where memory cells sit at the intersection of word lines and bit lines. This allows to address cells individually.
The result is that data gets written and read in small sizes. This is leading to faster and more efficient read/write processes.
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3D XPoint technology will sample later this year with select customers. Intel and Micron are developing individual products based on the new technology.