SanDisk announced two new flash chip technology achievements. SanDisk will begin mass-production of the world’s first high performance 4-bits-per-cell (X4) flash memory. Using 43-nanometer (nm) process technology, this breakthrough enables 64-gigabit (Gb) memory in a single die – the highest capacity in the industry and suitable for the most demanding storage applications.
SanDisk announced together with Toshiba also the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer (nm) process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip.
The 32Gb X3 on 32nm technology is the smallest NAND flash memory die reported so far, able to fit into the fingernail-sized microSD memory card format that has enjoyed widespread adoption in mobile phones and other consumer electronics devices. The 32nm 32Gb X3 is the highest density microSD memory die in the world, providing twice the capacity of a microSD chip on 43nm while still maintaining a similar die area.
More details in:
SanDisk Press-release 1
SanDisk Press-release 2
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