Filed under: News | Technology News
Feb 11 2009, 12:00am CST | by Luigi Lugmayr
SanDisk announced two new flash chip technology achievements. SanDisk will begin mass-production of the world’s first high performance 4-bits-per-cell (X4) flash memory. Using 43-nanometer (nm) process technology, this breakthrough enables 64-gigabit (Gb) memory in a single die – the highest capacity in the industry and suitable for the most demanding storage applications.
SanDisk announced together with Toshiba also the co-development of multi-level cell (MLC) NAND flash memory using 32-nanometer (nm) process technology to produce a 32-gigabit (Gb) 3-bits-per-cell (X3) memory chip.
The 32Gb X3 on 32nm technology is the smallest NAND flash memory die reported so far, able to fit into the fingernail-sized microSD memory card format that has enjoyed widespread adoption in mobile phones and other consumer electronics devices. The 32nm 32Gb X3 is the highest density microSD memory die in the world, providing twice the capacity of a microSD chip on 43nm while still maintaining a similar die area.
More details in:
SanDisk Press-release 1
SanDisk Press-release 2
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Luigi Lugmayr
Luigi is the founding chief Editor of I4U News and brings over 15 years
experience in the technology field to the ever evolving and exciting
world of gadgets. He started I4U News back in 2000 and evolved it into
vibrant technology magazine.
Luigi can be contacted directly at ml@i4u.com. Luigi posts regularly on LuigiMe.com about his experience running I4U.
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